Buried type semiconductor laser element

Abstract

Abstract PURPOSE:To obtain the element whose second clad layer is high in dimensional accuracy and which is excellent in characteristic by a method wherein an etching stop layer, which prevents a selective etching of a laminated body from advancing at the formation of a mesa, is provided to the base of the stripe-like mesa inside the second layer. CONSTITUTION:A semiconductor laser element is provided with a buried layer 7 formed at both the sides of a mesa parallel to a direction in which laser rays advance, where the mesa composed of a second clad layer 5 and a cap layer 6 is formed through a selective etching of a laminated body possessed of a buffer layer 2, a first clad layer 3, an active layer 4, a second clad layer 5 and a cap layer 6 which are successively laminated on a semiconductor substrate 1. In the above semiconductor laser element, an etching stop layer 11, which prevents a selective etching of the laminated body from advancing at the formation of the mesa, is provided to the base of the stripe-like mesa inside the second clad layer 5. For instance, the above second clad layer 5 is composed of a p-Al0.4Ga0.6As layer 5a 0.3mum in thickness, a p-Al0.3Ga0.7As etching stop layer 11 0.05mum in thickness and a p-Al0.4Ga0.6As layer 5b 1.5mum in thickness.

Inventors

• 👤 Yasumasa Watanabe
• 👤 泰正 渡辺

Bibliographic Details