Manufacture of thin film solar cell

Abstract

Abstract PURPOSE:To dispense with a patterning process of an amorphous semiconductor layer, which is to be performed between the formation of the amorphous layer and a second electrode, and to make the connection resistance between units adjacent to each other lower by a method wherein the output and the sweep rate of laser rays used for boring a through-hole are so set as to be within a specified range of values. CONSTITUTION:Two or more first electrodes 21-23 are formed so as to be arranged in a line on an insulating substrate 1, and an amorphous semiconductor layer 3 and a second electrode layer 4 are laminated covering the electrodes 21-23, and then not only two or more through-holes 71-73 are bored in the second electrode layer 4 and the amorphous semiconductor layer 3 reaching above the vicinity of the edges of the first electrodes 21-23 respectively but also the amorphous semiconductor layer 3 and others around the through-holes 71-73 are made excellent in conductivity by irradiation with laser rays 6, and only the second electrode layer 4 is divided by cutting if off at the points above the inside of the first electrodes 21-23 and separate from the through-holes 71-73. In the manufacture of a series-connected type thin film solar cell as mentioned above, a YAG laser is used for obtaining the above laser rays 6, whose optical output and sweep rate of the laser beam is made to be 400-450mW and 90-100mm/sec respectively.

Inventors

• 👤 Naoki Ito
• 👤 直樹 伊藤

Bibliographic Details