Manufacture of compound semiconductor device

Abstract

Abstract PURPOSE:To perform an electrical isolation of a semi-insulative compound semiconductor substrate from an active region not only in the lateral direction but also in the longitudinal direction and to contribute to the realization of an increase in integration by a method wherein oxygen ions are implanted in the substrate to form a high- resistance interlayer isolation layer on the whole surface, then, necessary compound semiconductor layers, such as an active layer, are grown on the isolation layer. CONSTITUTION:Oxygen ions are implanted in a semi-insulative compound semiconductor substrate 1 to form a high-resistance interlayer isolation layer 2 on the whole surface. Then, necessary compound semiconductor layers 3-5, such as an active layer 3, are grown on the layer 2. For example, oxygen ions are implanted in a semi-insulative GaAs substrate 1 at a dose of 5X10<11>cm<-2> or thereabouts and at an accelerating energy of 50keV or thereabouts to form an interlayer isolation layer 2 of a depth of about 1000Angstrom or thereabouts. Then, a non-doped GaAs active layer 3, an Si-doped AlGaAs electron feeding layer 4 and an Si-doped GaAs contact layer 4 are grown by an MBE method. After that, after oxygen ions are selectively implanted to form an interelement isolation layer 7 to reach the layer 2, an HEMT is formed by adaptation of a normal technique.

Inventors

• 👤 Junji Saito
• 👤 斎藤　淳二

Bibliographic Details