Light-emitting semiconductor element substrate and manufacture thereof

Abstract

Abstract PURPOSE:To effectively prevent a thick-film layer from being oxidized by using a protective film and to obtain a smooth crystal growth interface and a smooth meltback face by a method wherein a Ga1-y-AlyAs protective film whose mixed crystal ratio (y) of Al is small (where 0.05<y<0.3) is grown on a GaAlAs thick-film layer. CONSTITUTION:A surface protective film composed of a Ga1-xAlxAs compound semiconductor single-crystal thick-film layer 3 of a first mixed crystal ratio (where 0.6<x<0.85) and a low Al-concentration and slow-oxidation Ga1-yAlyAs compound semiconductor single-crystal thin-film layer 4 of a second mixed crystal ratio (where 0.05<y<0.3) is grown epitaxially one after another; a GaAs single-crystal substrate 1 is removed by using a mechanical method and/or a chemical method. That is to say, it is possible to suppress oxidation of the thick-film layer 3 effectively by using the protective film 4; various troubles causes by the oxidation are eliminated. In addition, since a mixed crystal ratio (y) of Al is 0.5 or higher in the protective film 4, a dislocation can be made small when the protective film 4 is melted back and removed. Thereby, a smooth crystal growth interface and a smooth meltback face can be obtained.

Inventors

• 👤 Masahito Yamada
• 👤 雅人 山田
• 👤 Shinji Orimo
• 👤 織茂　伸次
• 👤 Takuo Takenaka
• 👤 卓夫 竹中

Bibliographic Details