Semiconductor device

Abstract

Abstract PURPOSE:To prevent an increase in a contact resistance by a method wherein a wiring part is formed in such a way that its silicon content is reduced gradually toward the side of a silicon substrate in order to reduce a diffusion amount of silicon in the wiring part during a heat treatment. CONSTITUTION:An insulating layer 2 is formed on a silicon substrate 1 having a diffusion film 1a; a wiring part 3 of an aluminum-silicon alloy containing silicon(Si) is formed on the insulating layer 2. This wiring part 3 is formed of a plurality of wiring films 3a, 3b in such a way that its silicon content is reduced gradually toward the side of the silicon substrate. A contact hole 4 is made in a prescribed place of the insulating layer 2; individual element regions formed inside the silicon substrate 1 are connected to the wiring part 3. Thereby, even when a semiconductor device is heat-treated, a diffusion amount of the silicon in the wiring part is reduced, and a precipitation amount of the silicon at a connection part of the silicon substrate and the wiring part is reduced; it is possible to prevent an increase in a contact resistance.

Inventors

• 👤 Hiroyuki Usami
• 👤 宇佐美　浩之
• 👤 Hiroaki Tezuka
• 👤 弘明 手塚
• 👤 Yumiko Ikeda
• 👤 池田　由美子
• 👤 Yuji Tanida
• 👤 谷田　雄二

Bibliographic Details