Storage device

Abstract

Abstract PURPOSE:To increase capacitance by forming each of the one-side electrodes of capacitors in adjacent storage cells by using a first and a second conducting layers, and forming the other side electrodes by using a third conducting layer, and forming the third conducting layer also on the overlapping part of the first and the second layers. CONSTITUTION:In a DRAM constituted of a switching transistor(Tr) and a lamination type capacitor connected with said Tr, a polycrystalline Si layer 31 is formed as the one side electrode 21a of a capacitor 18a in a storage cell 11a. A polycrystalline silicon layer 27 is formed as the one-side electrode 21b of a capacitor 18b in a storage cell 11b. A polycrystalline Si layer 34 is formed as the other side electrodes 23 of the capacitors 18a, 18b. Since the electrode 23 exsists also on the overlapping part of the electrodes 21a, 21b, the facing area of the electrodes 21a, 21b and the electrode 23 is large for areas of the capacitors 18a, 18b, so that the capacitance is made large.

Inventors

• 👤 Masataka Shingu
• 👤 新宮　正孝

Bibliographic Details