Array of semiconductor lasers which can be addressed individually

Abstract

Abstract PURPOSE: To obtain a semiconductor laser array capable of individual addressingly a method wherein a semiconductor layer has an active region, impurities implanted in a region between optical cavities make a disordered alloy region, the alloy region has a specified depth, and distanced between the centers of laser elements and cross connection impedance between the laser elements are defined. CONSTITUTION: An Si3 N4 mask having an aperture for exposing a region of a laser structure to disorder is formed on an upper surface of a cap layer 20. Optical cavities and current confining regions of laser elements 13A, 13B are formed on the region of the laser structure which is exposed by a masking treatment. When silicon is diffused in a quantum well active region 16, Al and Ga of GaAs-GaAlAs in the active region 16 are mixed, and GaAlAs alloy having an averaged molar fraction of AlAs which is shown by a disordered region 28 is generated. After the disordered region 28 is formed, P-type zinc diffusion 21 is performed all over the whole surface of the laser structure, as far as the diffusion depth 23. Thereby an excellent ohmic contact is given, and series resistance with the laser elements 13 is reduced. The distance between the centers of the laser elements can be set to be 3-10μm, without generating electrical crosstalk and optical crosstalk or thermal crosstalk which make trouble.

Inventors

• 👤 Robert L Thornton
• 👤 ロバート　エル　ソーントン

Bibliographic Details