semiconductor equipment

Abstract

Abstract PURPOSE:To obtain a sufficient current gain in high speed operation by constituting a bipolar transistor in a two-layered structure, arranging a first emitter layer of high impurity concentration so as to be in contact with the base, and arranging a second emitter layer of low impurity concentration so as to be in contact with a first emitter layer. CONSTITUTION:On an N-type substrate 1, a P-type Si layer 2 as the base is formed by epitaxial growth: thereon an As-doped high concentration N-type Si layer 3, as a first emitter layer, is epitaxially grown in a specified thickness; thereon an N-type Si layer 4, as a second emitter layer, is epitaxially grown in a specified thickness, the concentration of which layer is in the range where gap-narrowing does not occur. By constituting the emitter in two-layered structure in this manner, and increasing the base concentration, the high speed operation is enabled, and, at the same time, the current gain also can be increased.

Inventors

• 👤 Toshihiro Sugii
• 👤 寿博 杉井

Bibliographic Details