Superconductive field-effect transistor

Abstract

Abstract PURPOSE:To obtain a high-speed three terminal element, operating speed of which is increased and density of which is elevated, by filling a channel between two electrodes of a composite oxide group superconductive material with a semiconductor layer and forming a third electrode for applying an electric field to the semiconductor layer. CONSTITUTION:A source electrode 3 and a drain electrode 1 are shaped onto the (100) face of an MgO or SrTiO3 single crystal substrate 4 by a composite oxide superconductor having oxygen deficiency type perovskite crystal structure such as Y1Ba2Cu3 O7-x. A semiconductor layer 5 composed of Si, GaAs, etc. is filled and formed into a channel region between the electrodes 1, 3, and an insulator layer 6 consisting of SiO2, etc., and a gate electrode made of Al are shaped. An element having such constitution is used as a high-speed three terminal element in which superconductive currents are made to flow into the semiconductor 5 by utilizing a superconductive proximity effect. Since the difference of the thermal expansion coefficients of the substrate 4 and the electrodes 1, 3 is diminished, the effect of heat history in a manufacturing process is reduced. Since the electrodes 1, 3 are shaped onto the (100) face of the substrate 4, the direction that currents are easy to flow can be made to run parallel with the surface, and critical current density JC can be increased.

Inventors

• 👤 Naoharu Fujimori
• 👤 直治 藤森
• 👤 Keizo Harada
• 👤 敬三 原田
• 👤 Shuji Yatsu
• 👤 矢津　修示
• 👤 Tetsuji Jodai
• 👤 哲司 上代
• 👤 Hideo Itozaki
• 👤 糸崎　秀夫

Bibliographic Details