Forming method of carbon-containing silicon thin film

Abstract

Abstract PURPOSE:To form, with high speed, a thin film which has a wide optical forbidden bandwidth and is excellent in photoelectric characteristics by decomposing silicon compound having, in molecule, unsaturated hydrocarbon radical capable of radical polymerization, by using plasma. CONSTITUTION:A silicon substrate is inserted in a vacuum thin film forming chamber, and heated at a specified temperature, while silicon compound containing, in molecule, unsaturated hydrocarbon radical capable of radical polymerization, e.g., monovinylsilane gas, is supplied, the pressure in the chamber is adjusted by a vacuum discharging means; the gas is decomposed by generating plasma by using a specified discharging electric power, and a carbon containing silicon thin film is formed on the substrate. The discharging electric power to be used in this process can be decreased as compared with the case of hydrocarbon such as methane, ethane, etc., so that plasma damage is reduced. Thereby, the carbon-containing silicon thin film which has a wide optical band gap and exhibits high photoelectric conductivity can be formed with high speed.

Inventors

• 👤 Masahiko Mitsuzuka
• 👤 雅彦 三塚
• 👤 Masayoshi Ito
• 👤 正義 伊藤
• 👤 Nobuhiro Fukuda
• 👤 福田　信弘

Bibliographic Details