Semiconductor memory device

Abstract

Abstract PURPOSE:To reduce a peak current at the time of operating a sense amplifier circuit and to reduce a power consumption by driving a sense amplifier circuit selectively corresponding to the selection of an column address. CONSTITUTION:When a column address 1 is selected, a sense amplifier SA1 connected to a pair of bit lines b1 and the inverse of b1 corresponding to a word line W1 is activated by a power source control circuit PLC1 and amplifies data read by the bit lines b1 and the inverse of b1. The amplified data are transferred to a pair of data lines D and the inverse of D through a switching element SW1 selected by a column decoder CO and are amplified by a main amplifier MA. The activated sense amplifier circuit is only SA1, and SA2-SAn are not activated.

Inventors

• 👤 Hironori Akamatsu
• 👤 寛範 赤松
• 👤 Tsuyoshi Shiragasawa
• 👤 白ケ澤　強
• 👤 Junko Matsushima
• 👤 松嶋　順子

Bibliographic Details