Semiconductor device

Abstract

Abstract PURPOSE: To simplify a circuit and to obtain a fast processing rate by exclusively causing the resonance in the ground level of a quantum well to obtain such current-voltage characteristics that has a negative resistance region. CONSTITUTION: A GaAs layer 3 and a resonant tunneling double barrier layer including a quantum well are deposited on a GaAs substrate 2, on which heterojunction 19 is grown. Further, a GaAs contact layer 11 and a metalized layer 12 are formed by vapor deposition, and contact pads A, B are formed at a specified distance. The obtd. device corresponds to tunnelling diodes 21, 22 connected parallel to each other, and a resistor 23 connected both diodes corresponds to the channel layer 8 formed in the gap between the pads A, B. The common tunneling current is injected into the layer 8 via the barrier 18 to give current-voltage characteristics including a negative resistance region, and therefore, the current flows the region under the pads and between the pads. Or, by using a InAlAs-InGaAs-InAlAs resonant tunneling structure, the device can be operated at >100 deg.K.

Inventors

• 👤 Federico Capasso
• 👤 フェデリコ　キャパソ
• 👤 Alfred Y Cho
• 👤 アルフレッド　イー　チョー
• 👤 Susanta Sen
• 👤 スザンタ　セン

Bibliographic Details