Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To easily form a silicide layer by causing a reaction in the interface between a metallic layer and a substrate by providing this semiconductor device with a metallic silicide layer formed on a surface part of a semiconductor substrate at the bottom of a contact hole formed in an insulating layer and a metallic nitride layer formed in said contact hole above said silicide layer. CONSTITUTION:A tungsten silicide layer 13 as a metallic silicide layer is selectively formed on a surface of a silicon substrate in a contact hole 3 of a semiconductor device. Further on that layer, a tungsten nitride layer 14 as a metallic nitride layer is formed, on which a high-melting-point metal wiring layer 15 made of tungsten and, etc., is formed. The silicide layer 13 of this semiconductor device improves the contact of the wiring layer 15 with the substrate 1 and reduces a contact resistance, whereas the layer 4 acts as a reaction barrier layer for controlling a reaction between the substrate 1 and the wiring layer 15, thereby reducing a contact resistance of this semiconductor device.

Inventors

• 👤 Yasuo Yamaguchi
• 👤 泰男 山口

Bibliographic Details