Semiconductor photodetector

Abstract

Abstract PURPOSE:To obtain a device simple in structure which can suppress dark current low, can have internal amplification function when the need arises and can be driven by low bias voltage by a method wherein a pair of Schottky electrodes are provided on a semiconductor substrate and a specified bias voltage is applied to between the electrodes, etc. CONSTITUTION:A semiconductor substrate 1 and first and second Schottky electrodes 3a, 3b formed at a specified distance on the substrate 1 are provided, the surface of the semiconductor substrate 1 put between the first and second Schottky electrodes 3a, 3b makes a photo receiving face, and a specified bias voltage is applied to between the first and second Schottky electrodes 3a, 3b. For example, insulation films 2a, 2b are formed on an n-type GaAs substrate 1, and a pair of Schottky electrodes 3a, 3b are formed on the substrate 1. The ends of the electrodes extend onto the upper surface of the semiconductor substrate 1 to make Schottky junction, and the surface of the semiconductor substrate 1 put between both electrodes 3a, 3b makes a photo receiving face. Then a distance between both electrodes 3a, 3b is set to approx. 5mum, and bias to be applied is set to 10 to 20V.

Inventors

• 👤 Yoshihiko Mizushima
• 👤 宜彦 水島
• 👤 Kazutoshi Nakajima
• 👤 和利 中嶋
• 👤 Toru Hirohata
• 👤 徹 廣畑
• 👤 Takashi Iida
• 👤 孝 飯田
• 👤 Sadahisa Warashina
• 👤 禎久 藁科
• 👤 Kenichi Sugimoto
• 👤 賢一 杉本
• 👤 Hirobumi Suga
• 👤 博文 菅

Bibliographic Details