Face type optical modulator

Abstract

Abstract PURPOSE:To reduce the crosstalk between each element by providing a multi-layer structure formed by placing a multiple quantum well layer between two reflecting mirrors on a semiconductor substrate, and integrating a face type optical modulating element in which the reverse side of the semiconductor substrate is worked like a convex lens on the same semiconductor substrate like a two-dimensional matrix. CONSTITUTION:A multi-layer structure formed by placing a multiple quantum well layer 7 formed by laminating alternately two kinds of semiconductors whose band gaps are different from each other between two reflecting mirrors 3, 8 is provided on a semiconductor substrate 9, and a face type optical modulating element 12 in which the reverse side of the semiconductor substrate 9 is formed like a convex lens is integrated on the same semiconductor substrate 9 like a two-dimensional matrix. In this state, when a voltage is applied to electrodes 4, 5, that which is small in the absorption in the multiple quantum well layer at the time of non-electric field becomes large, and a switching operation for varying the transmission intensity of light can be obtained. By this switching operation, light transmits through the semiconductor substrate 9 and receives a condensing action by a lens 10, and condensed to a photodetector 13. In such a way, a face type optical modulator for reducing an optical crosstalk between each element can be obtained.

Inventors

• 👤 Yuji Koga
• 👤 甲賀　祐二

Bibliographic Details