Magnetoresistance effect element

Abstract

Abstract PURPOSE:To increase magnetic resistance variation rate, to reduce anisotropic magnetic field, and to realize high sensitivity by laminating a Co or Co-base first ferromagnetic metal thin film and a second Ni or Ni-base ferromagnetic metal thin film on a nonmagnetic substrate alternately. CONSTITUTION:A structure is made in a multilayer of a nonmagnetic substrate 1 and a Co or Co-base ferromagnetic layer 2 and an Ni or Ni-base ferromagnetic layer 3 laminated alternately thereon. Glass, a sintered body of Al2O3 and TiC, ferrite, etc., can be used as a material of the substrate 1, and a ferromagnetic alloy such as Co and Co-Ni or a material made by applying additive thereto can be used for the first ferromagnetic layer 2. Ni or Ni-Fe alloy or a material made by applying additive thereto can be used as a material of the second ferromagnetic layer 3. Especially in a range not exceeding 50Angstrom of a lamination cycle of a multilayer film made by laminating a Co layer and an Ni layer alternately, a magnetoresistance variation rate not less than twice as much as that of a permalloy thin film can be acquired and an anisotropic magnetic field as small as that of the permalloy thin film can be realized.

Inventors

• 👤 Yoshihiro Motomura
• 👤 嘉啓 本村

Bibliographic Details