Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form a shallow pn junction without consuming a semiconductor substrate by covering a window for forming a source and drain area which are formed at an insulation film on a semiconductor substrate with a silicon film, making it to react with a metal film to forming silicide, and diffusing impurities within a silicon film onto a substrate for forming a source and drain areas. CONSTITUTION:After forming a gate insulation film 3, a polycrystal silicon film gate electrode 4, a n<-> type source area 6, a drain area 7, and a dioxide silicon film gate electrode side wall film 5, a polycrystal silicon film 8 is formed. As ion is embedded, etching is performed, and only the silicon film 8 is left at the source and drain areas 6 and 7. Then, a titanium film 12 is formed, heat treating is performed, and than the non-reacted titanium film 12 is removed and heat treating is performed again. It allows a source electrode 13 consisting of titanium/silicide, a drain electrode 14, and a gate electrode 15 to be formed. At this time, impurities at the n<-> type source are 6 and the drain area 7 are activated, As is diffused from the silicon film 8, and a n<+> type source area 9 and a drain area 10 are formed.

Inventors

• 👤 Kenji Nishida
• 👤 健治 西田

Bibliographic Details