Semiconductor laser device and manufacture thereof

Abstract

Abstract PURPOSE:To simplify the structure of the lateral-mode controlled InGaA P semiconductor laser of the title device and improve the yield of the laser by incorporating a diffraction grating in the laser. CONSTITUTION:An n-GaAs substrate 10, n-In0.5(Ga0.3A0.7)0.5P clad layer 11, non- doped lnGaP active layer 12, p-In0.5(Ga0.7A0.3)0.5P optical waveguide layer 13, current blocking layer 14, p-In0.5(Ga0.3A0.7)0.5P clad layer 15, p-GaAs contact layer 16, and diffraction grating 17 are provided. Since the built in diffraction grating 17 amplifies only rays of light in the direction of a resonator, a lateral- mode controlled laser which stably oscillates in a single longitudinal mode can be obtained. Therefore, a laser which is simple in structure and has good characteristics can be obtained in high yield.

Inventors

• 👤 Hajime Okuda
• 👤 肇 奥田
• 👤 Masayuki Ishikawa
• 👤 正行 石川
• 👤 Hideo Shiozawa
• 👤 塩沢　秀夫

Bibliographic Details