Manufacture of semiconductor laser device

Abstract

Abstract PURPOSE:To protect the regrown interface against oxidation by a method wherein an etching stopper layer left at the etching of a current flow path groove is melted back, the surface of a clad layer at the groove is exposed when a cap layer is made to grow, and the cap layer and a contact layer are successively grown thereon. CONSTITUTION:An oxidation preventive GaAs layer 10 is left in thin film on the base of a current flow path 6 provided to a first conductivity type AlpGa1-pAs current block layer 11 which has been grown in a first epitaxial crystal growth process. When a second conductivity type AlzGa1-zAs cap layer 7 is grown without exposing a second conductivity type AlzGa1-zAs upper clad layer 4, only the oxidation preventive GaAs layer 10 is melted back to remove through a liquid phase epitaxial method. Thereafter, the second conductivity type AlzGa1-zAs cap layer 7 and a second conductivity type GaAs contact layer 8 are successively formed. By this setup, a regrown interface can be protected against oxidation.

Inventors

• 👤 Koji Yamashita
• 👤 山下　光二
• 👤 Masato Okada
• 👤 真人 岡田
• 👤 Misao Hironaka
• 👤 美佐夫 廣中

Bibliographic Details