Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To facilitate a work and to improve the reverse withstand voltage characteristics of a device by a method wherein element formation regions are respectively covered with a mask provided with each sidewall on its side surfaces to inhibit the areas of the element formation regions from becoming narrow. CONSTITUTION:A thermal oxide film 2 is formed on the surface of a P-type Si substrate 1 and oxide films 2' only at element formation region parts are left by selective etching. Then, after a thermal oxide film 2'' is grown at a part, from which the film 2 is removed, an Si nitride film 3 is laminated. The film 3 is etched to form sidewalls (SWs) 13 consisting of an Si nitride film on the side surfaces of the films 2'. After boron is ion-implanted in surface parts 1a, field oxide films 5 and channel stopper regions 12 are formed by an oxidation treatment. The films 2' are removed by etching using a photoresist pattern to leave the SWs 13 and the element formation regions A are formed. MOSFETs are respectively formed at these regions A. Gate oxide films 8 are formed, gate electrodes 9 are respectively formed on them, phosphorus is ion- implanted using the electrodes 9 and the SWs 13 as masks to provide source and drain regions 10 and 11 and the SWs 13 are removed.

Inventors

• 👤 Naomasa Oka
• 👤 直正 岡
• 👤 Takashi Saijo
• 👤 隆司 西條

Bibliographic Details