Semiconductor device

Abstract

Abstract PURPOSE:To obtain a semiconductor device having a structure which is difficult to make the scattering arise in characteristics by mounting the dummy gate of a memory transistor which does not function actually at the outer peripheral part of gates of a memory transistor which functions actually so that its dummy gate is adjacent to a pattern at an endmost part of the foregoing gates. CONSTITUTION:In an EPROM, the dummy gate 8 of a memory transistor which does not function actually is mounted on an outer peripheral part of gates 3 of the memory transistor which functions actually in such a manner that its dummy gate is adjacent to an endmost part of the foregoing gates 3. For example, simultaneously with the formation of control gates 3 having memory cells which function actually as the EPROM, the dummy gate 8 which does not function actually but has a similar cross section structure is formed. The scattering of gate lengths L 1-L 5 of the control gates 3 which function actually is thus suppressed to a small extent. Consequently, this approach makes the scattering of characteristics of the memory transistor smaller only by taking a minimum space.

Inventors

• 👤 Hajime Arai
• 👤 新井　肇
• 👤 Hidenori Arita
• 👤 有田　英徳
• 👤 Kazuaki Miyata
• 👤 和明 宮田

Bibliographic Details