Resin-sealed semiconductor integrated circuit

Abstract

Abstract PURPOSE:To minimize cover cracks and shift of an Al interconnection and to realize a large-sized chip of resin-sealed semiconductor integrated circuit by removing a part of the corners of a protective film of the semiconductor integrated circuit chip. CONSTITUTION:An Al interconnection 3 is formed on a silicon oxide film 5 formed in a semiconductor substrate. After a silicon nitride film is formed as a protective film 2, slits 1 are formed in the silicon nitride film simultaneously with etching of a bonding pad section. This semiconductor integrated circuit chip is mounted on a lead frame, wire bonding is performed and the chip is sealed with resin. If the semiconductor integrated circuit is heated or cooled abruptly, stress is created between the sealing resin 6 and the semiconductor integrated circuit chip 4. However, no crack is produced in the silicon nitride film since the film 2 has the slits 1. Further, since the slits 1 decrease the stress, the Al interconnection 3 is not shifted substantially. In this manner, it is possible to provide a large-sized chip of resin-sealed semiconductor integrated circuit.

Inventors

• 👤 Yoshio Miyazaki
• 👤 良雄 宮崎

Bibliographic Details