Ink for thin-film resistor formation and manufacture of thin-film resistor using it

Abstract

Abstract PURPOSE:To obtain an ink, for thin-film resistor formation use, whose quality is always definite, which can form a pattern of high accuracy and whose electrical characteristic is good by a method wherein a compound containing ruthenium in a structure, abietic acid and a solvent used to dissolve these are used as main constituents. CONSTITUTION:A compound containing ruthenium in a structure, a metal compound as required, abietic acid and a solvent used to dissolve these are contained as main constituents. An inorganic compound such as ruthenium chloride or the like, various ruthenium alkoxides, an organic ruthenium compound having a ruthenium-carbon-based bond or the like can be enumerated as the compound containing ruthenium in the structure. A solvent which mutually dissolve abietic acid, a ruthenium compound and the metal compound can be used as the solvent. Thereby, it is possible to obtain an ink, for thin-film resistor formation use, whose quality is always definite, whose electrical characteristic is good and which can form a thin-film resistor.

Inventors

• 👤 Chiharu Hayashi
• 👤 千春 林
• 👤 Kazuyuki Okano
• 👤 和之 岡野
• 👤 Munehiro Tabata
• 👤 宗弘 田端
• 👤 Yasuto Isozaki
• 👤 磯崎　康人
• 👤 Hiroshi Hasegawa
• 👤 洋 長谷川

Bibliographic Details