Manufacture of semiconductor memory

Abstract

Abstract PURPOSE:To improve the degree of integration by forming an O/N film having high reliability in an oxygen atmosphere containing trichloroethane and shaping a memory-cell capacitor by using the O/N film. CONSTITUTION:An element isolation insulating film 2 is formed onto a silicon substrate 1, and the pattern of a first conductive layer 3 is shaped. A silicon nitride film 4 is shaped onto the first conductive layer 3, the upper section of the silicon nitride film 4 is oxidized in an oxygen gas atmosphere containing trichloroethane at the anti-oxygen flow ratio of 0.95-2.00% as a trichloro group gas, a silicon oxide film 5 is formed as an O/N film 6, and a second conductive layer 7 is formed onto the O/N film 6. When the O/N film 6 is formed in the oxygen atmosphere including trichioroethane, trichloroethane reacts with oxygen, chlorine gas and steam are generated, the rate of oxidation is increased, and the reliabiliby of the O/N film 6 can be improved by the gettering effect, etc., of sodium and the positive ions of a heavy metal, etc., by chlorine gas.

Inventors

• 👤 Hiroki Naraoka
• 👤 浩喜 楢岡
• 👤 Kenji Yoneda
• 👤 健司 米田
• 👤 Tetsuo Ishida
• 👤 哲夫 石田

Bibliographic Details