Lsi designing device

Abstract

Abstract PURPOSE:To prevent the long-term reliability characteristics of an MOSLSI from deteriorating by incorporating the model of a channel hot carrier HC phenomenon to a circuit simulator, and automatically decide a deteriorated transistor (TR), and automatically outputting the name of the TR. CONSTITUTION:The titled device possesses a data input means, an LSI characteristic simulation means, the long-term reliability deterioration characteristic calculating means of the MOSFET, a deteriorated TR and deteriorated sub- circuit deciding means, and a data output means. A circuit simulator is used for the LSI characteristic simulation means, and the time change of an output signal according to the time change of an input signal and a voltage change at every node is obtained. From this result, the deciding reference characteristics of the deteriorated TR are calculated by the model of the HC phenomenon, compared with the deciding reference value of the deteriorated TR designated by the input data beforehand, and the deteriorated TR or the deteriorated sub-circuit is automatically extracted. Thus, the long-term reliability characteristics of the MOSLSI due to an HC effect can be prevented from deteriorating.

Inventors

• 👤 Masao Aoki
• 👤 青木　征男
• 👤 Hiroo Masuda
• 👤 弘生 増田
• 👤 Kiyoo Ito
• 👤 清男 伊藤
• 👤 Masakazu Aoki
• 👤 正和 青木

Bibliographic Details