Formation of aluminum nitride film

Abstract

Abstract PURPOSE:To easily form an AlN film at a low cost in a short period of time by adding water to an org. solvent soln. of metal alkoxide contg. Al to hydrolyze soln., coating the soln. on a base and heat treating the coating in a nitrogen atmosphere. CONSTITUTION:The metal alikoxide such as Al(OC4H9)3 contg. Al is dissolved into an org. solvent such as benzene to prepare the soln. The water is then added to this soln. to hydrolyze the above-mentioned metal alkoxide. The soln. contg. the Al(OH)3 formed in such a manner is coated to a prescribed thickness by a dipping method, etc., on the base. The base is thereafter disposed in a heater and is heated to about 600-1,000 deg.C in a nitrogen atmosphere. The polycrystalline Al film having the desired thickness is formed on the base in this way. The above-mentioned heating temp. is set at about 1,000 deg.C at this time, by which the AlN film having the crystal structure of the hexagonal type in which the C-axis is perpendicular to the substrate surface is obtd.

Inventors

• 👤 Seiji Nishikawa
• 👤 誠司 西川
• 👤 Kenichi Shibata
• 👤 賢一 柴田
• 👤 Kosuke Takeuchi
• 👤 孝介 竹内
• 👤 Toshiharu Tanaka
• 👤 敏晴 田中
• 👤 Shoichi Nakano
• 👤 中野　昭一
• 👤 Kazuhiko Kuroki
• 👤 黒木　和彦

Bibliographic Details