Magnetoresistance effect element

Abstract

Abstract PURPOSE:To make the characteristics of a pair of elements coincident with each other so as to eliminate the distortion of the characteristic of the elements as a whole by a method wherein the pair of rectangular ferromagnetic magnetoresistance elements are arranged in such a manner that lengthwise directions of their patterns are not parallel with each other and make a symmetrical angle with a direction of an easily magnetized axis. CONSTITUTION:An NiFe film and an Au film are continuously formed in film in a direct magnetic field through an evaporation method. In this process, a direct magnetic field applying direction is coincident with an easily magnetized axis of a ferromagnetic. After the formation of a screen-like pattern through a photolithography and an ion etching, the Au film is removed from the part other than a part which is to be an electrode 4 through a chemical etching to expose the NiFe film for the formation of ferromagnetic magnetoresistance(MR) elements 1a and 1b. Then, a SiO2 is formed on the MR elements 1a and 1b to protect them, and then a substrate 5 is cut off to form into a prescribed shape.

Inventors

• 👤 Hirotaka Okabe
• 👤 岡部　弘高
• 👤 Takao Maruyama
• 👤 丸山　隆男

Bibliographic Details