Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To reduce the step difference of an opening and improve the coverage of a second conductive film by leaving some of a second insulation film in the inner wall of an opening of a first insulation film by an anisotropic etching method and forming its upper surface in a tapered form. CONSTITUTION:An opening 2a is selectively opened in the base insulation film 2 covering the surface of a semiconductor substrate 1. On the opening 2a is formed a first conductive film 3. On the insulation film 2 and the conductive film 3 is formed a first insulation film 4. An opening 4a is opened selectively over the conductive film 3 of the insulation film 4. A second insulation film 5 is deposited over the entire surface including the opening 4a. Anisotropic etching is performed on the insulation film 5 for etchingback. Only a vertical portion 5a along the inner wall of the opening 4a is left and the upper surface of the portion 5a is etched in a tapered form such that it is inclined toward the center of the opening 4a. Then, step difference is reduced by the upper- surface taper shape of the portion 5a of a second conductive film 6 and the coverage of the conductive film 6 is improved.

Inventors

• 👤 Toshihiro Natori
• 👤 名取　敏博

Bibliographic Details