Photomask for semiconductor integrated circuit

Abstract

Abstract PURPOSE:To form a high-accuracy pattern as designed by providing a light translucent film on an integrated circuit part pattern area or the part of the reverse surface of the photomask which faces said integrated circuit part pattern area. CONSTITUTION:A reticle 10 has the integrated circuit part pattern area 12 and a scribing line part pattern area 13 on the surface of a glass substrate 11 and is provided with the light translucent film 14 uniformly at the part of the reverse surface which faces the integrated circuit part pattern area 12, and the part which is sectioned with A-A', B-B', C-C' and D-D' in a figure is exposed to a semiconductor substrate. Light projected on the reticle 10 when passing through the scribing line part pattern area 13 has intensity q1 without any variation. Light which passing through the integrated circuit pattern area 12, on the other hand, is decreased in intensity by the light translucent film 14 to q0. Here, the intensity q0 can be controlled by the material and film thickness of the light translucent film 14 formed on the reverse surface of the reticle 10 and the pattern is formed as designed.

Inventors

• 👤 Hiroshi Nozue
• 👤 野末　寛

Bibliographic Details