Mos capacitor

Abstract

Abstract PURPOSE:To obtain a MOS capacitor which can suppress a noise by forming a second impurity layer containing high concentration impurity on a first impurity layer facing an electrode layer through an insulating film. CONSTITUTION:In a MOS capacitor having a first impurity layer 2 formed on a semiconductor substrate 1, an insulating film 3 formed on the layer 2, and an electrode layer 4 formed on the film 3, a second impurity layer 11 containing further high concentration impurity is formed on the surface layer of the layer 2. For example, a P<+> type impurity region 11 is provided on the surface layer of the P-type impurity region 2. The region 11 becomes a lower resistance layer than the region 2. Thus, since the low resistance layer becomes one electrode facing a polysilicon electrode 4, the potential of the region 11 can be stabilized through an aluminium wiring layer 8, thereby suppressing a noise.

Inventors

• 👤 Makoto Monoi
• 👤 誠 物井

Bibliographic Details