Method for crystal growth

Abstract

Abstract PURPOSE:To enable the control of the direction of crystal growth, position of nucleation and rate of crystal growth, by forming an amorphous silicon film on an insulator substrate having recesses and protrusions of specific size and shape and heating the substrate in such a manner as to keep the amorphous silicon of the recess and protrusion at a high temperature. CONSTITUTION:An insulating SiO2 film 2 (having a thickness of e.g., 1.5mum) is formed on a silicon substrate. Periodic recesses and protrusions having a height and period (e.g., a height of 0.1mum and a period of 0.2mum) smaller than the film thickness of the amorphous silicon film 4 (e.g., 0.5mum) are formed on the film in a region of smaller than about several mum square. An amorphous silicon film 4 is deposited and an antireflection film 5 made of e.g., Si3N4 is formed on the processing region 3. The whole specimen is heated with a heater and then with a heating light 6 such as visible laser light to heat the amorphous silicon on the recess and protrusion 3 at a high temperature and convert the silicon into a single crystal.

Inventors

• 👤 Hiroshi Terao
• 👤 博 寺尾

Bibliographic Details