Method for crystal growth

Abstract

Abstract PURPOSE:To increase the lateral growth length of a crystal in solid growth process and to obtain a single crystal SOI having large area, by forming a seed crystal region on an insulator, covering the whole area with an amorphous silicon film and heating the seed crystal region with a visible light laser. CONSTITUTION:An insulating SiO2 film 2 is formed on a silicon substrate 1 and is provided with seed crystal regions (e.g., holes of 1mum square with intervals of 20mum). A seed crystal 3 is embedded in the hole by selective epitaxial growth and then an amorphous silicon film 4 is deposited on the whole area. An antireflection film 5 made of Si3N4, etc., is formed on the seed crystal region and the whole specimen is heated and irradiated with a heating light 6 such as a visible laser light to heat the seed crystal region at a high temperature and convert the amorphous silicon film to a single crystal.

Inventors

• 👤 Hiroshi Terao
• 👤 博 寺尾

Bibliographic Details