Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To remove reactive products and mixed impurities produced in case of forming a pattern and to obtain a semiconductor having high reliability by forming a metal wiring film on an insulating film in the shape of a desired pattern and then performing high frequency-plasma etching all over the surface. CONSTITUTION:After a first insulating film 2 is formed on a semiconductor substrate 1, a first metal wiring film 3 is patterned by normal photoetching technique so as to formed the film 3 in a desired pattern. After a photoresist is removed, the surface of the film 3 and the exposed part of the film 2 are etched wholly by a high frequency plasma etching, thereby completely removing reactive product and impurities on the surface. The part in which the film 3 is removed by etching is designed by 4, and the part in which the film 2 is removed by etching is designated by 5. A final insulating film 10 is grown thereon. Thus, the reliable insulating film 10 is obtained.

Inventors

• 👤 Saburou Tokoda
• 👤 床田　三郎

Bibliographic Details