Manufacture of oxide film for semiconductor device

Abstract

Abstract PURPOSE:To obtain an oxide film in which an alkyl group does not exist and which has an excellent quality by a method wherein raw gas such as tetraethoxysilane and nitrogen or mixed gas of nitrogen and other gas are introduced to form the oxide film on a substrate by a plasma CVD method. CONSTITUTION:An Si substrate is placed in a plasma CVD apparatus and heated to a temperature of 100 deg.C. On the other hand, nitrogen is bubbled with a rate of 10cc/min into a container filled with tetraethoxysilane whose temperature is 25 deg.C and the nitrogen gas and the tetraethoxysilane gas are introduced into the plasma CVD apparatus to make the pressure in the apparatus 2Torr and a plasma CVD film is formed on the substrate by a high frequency power of 70W. When the infrared absorption spectrum of the formed oxide film is measured, the absorption spectra of an alkyl group and an OH group are not observed.

Inventors

• 👤 Yuko Hochido
• 👤 宝地戸　雄幸
• 👤 Takehiko Futaki
• 👤 剛彦 二木
• 👤 Hidechika Yokoyama
• 👤 横山　英親

Bibliographic Details