JPH01196833A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device having carbon film formed thereon
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1988-02-01
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Granted: —
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Expires: 2008-02-01
Abstract
Abstract PURPOSE:To obtain a chemically extremely stable carbon film by providing carbon or a film containing as a main ingredient carbon on or under electric wirings or bonding pad. CONSTITUTION:A mask 35 having a blocking function is selectively provided on a substrate 31 coated with carbon 34. With the mask 35 the carbon film 34 formed in advance at the lower side of the mask is selectively etched. After the etching, the mask 35 is removed, and carbon films 34-1, 34-2, 34-3 are selectively provided. A substrate selectively coated with the films 34 on the substrate 31 is formed. Thus, a chemically extremely stable carbon film is obtained.
Inventors
- 👤 Shunpei Yamazaki
- 👤 舜平 山崎
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-09 06:00
CPC Classifications
—
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References Cited (Backward Citations)
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