Photo detector and integrated receiver

Abstract

Abstract PURPOSE:To gain a photoelectric conversion signal which has only a small dark current against a longer wave band incident light, by forming on a substrate a combination of a photo detector and a transistor each of which has grated layers on both sides of an optical absorption layer. CONSTITUTION:On a semi-insulating compound semiconductor 25, grated layers 26 and 28 are formed on both sides of an InGaAs optical absorption layer 27 and an AlInAs layer 29 is formed on the grated layer 28 on which light is projected, to make a photo detector. By forming the grated layers, a discontinuity of the interface potential between layers 27 and 29 is practically neglected since the potential varies gradually from the layer 27 to the layer 27 by the existence of the layer 28. Furthermore, a phenomenon that a two-dimentional carrier is formed on the interface between the layer 27 and the substrate 25 by the layers 26 and 28 is practically avoided. Nextly, a transistor in the same configuration with this photo detector is combined with the photo detector to make an integrated receiver. By this method, it is possible to minimize a difference in surface level between the photo detector and the transistor.

Inventors

• 👤 Osamu Wada
• 👤 修 和田
• 👤 Toshio Fujii
• 👤 藤井　俊男
• 👤 Masanori Ito
• 👤 正規 伊藤
• 👤 Hiroyuki Nobuhara
• 👤 裕之 延原
• 👤 Masao Makiuchi
• 👤 正男 牧内

Bibliographic Details