Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To facilitate forming of an oxygen-doped silicon single crystal layer with excellent property of a single crystal by a method wherein, after polycrystalline silicon containing oxygen is deposited on a silicon substrate, silicon ions are implanted so that the substrate surface and the polycrystalline silicon film is made to be amorphous, and then the substrate surface and the amorphous silicon film are subjected to a thermal treatment for single- crystallization. CONSTITUTION:The required part of the main surface of a first conductivity type silicon single crystal substrate 1 is doped with an impurity to form a second conductivity type region 2. Then a silicone film 3 doped with oxygen and a first conductivity type impurity is formed on the second conductivity type region 2 and a silicon film 4 doped with a first conductivity type impurity is built up. Then silicon ions (Si<+>) are implanted so as to reach the silicon substrate 1 surface and the silicon films 3 and 4 and the silicon substrate 1 surface are made to be amorphous 3a and 4a. Further, a thermal treatment is carried out to change the amorphous regions into single-crystallized regions 3 and 4 by solid phase epitaxial growth. With this constitution, an emitter-base hetero-junction with excellent property of a single crystal can be obtained easily.

Inventors

• 👤 Toshihiko Hamazaki
• 👤 浜崎　利彦

Bibliographic Details