Semiconductor photodetector

Abstract

Abstract PURPOSE:To obtain a ultra-high speed semiconductor photodetector using the Aharonov-Bohm effect by forming a current path composed of a semiconductor having high purity and having thickness of approximately a de Broglie wavelength, semiconductor regions partially dividing said path and having different impurity concentration or consisting of different materials and a light-receiving surface to make light incident near the semiconductor regions. CONSTITUTION:When light having a wavelength absorbed by GaAs is projected from a light-receiving surface 9 through an antireflection film 10, carriers are generated in a GaAs line 2, but more carriers are generated with approach to the light-receiving surface 9. The difference of potential is generated in GaAs on the upper side 2a and lower side 2b of AlGaAs 4 by the concentration difference of the carriers. Since phase difference is generated by electron waves passing through the upper side 2a and lower side 2b of AlGaAs 4 by the difference of the potential and electron waves interfer, electron waves flowing between a gate and a source change. Accordingly, the element can be used as a photo-detector because a current value between the gate and the source changes by the amount of incident light.

Inventors

• 👤 Eitaro Ishimura
• 👤 栄太郎 石村

Bibliographic Details