Solid-state imaging device, manufacturing method thereof, and camera

Abstract

Abstract Translated from Japanese 【課題】少なくとも暗電流の抑制を図ることができる固体撮像装置およびその製造方法、並びに当該固体撮像装置を備えたカメラを提供する。 【解決手段】本実施形態に係る固体撮像装置は、基板３０の第１面側に配線層を有し、基板３０の第２面側から光を受光する。当該固体撮像装置は、基板３０に形成され、電荷蓄積領域４１を含む受光部３１と、基板３０の第１面上であって受光部３１に隣接して配置され、受光部３１に蓄積された信号電荷を転送する転送ゲート５１と、基板３０の第１面上であって受光部３１に重なって配置され、受光部３１の第１面近傍のポテンシャルを制御する制御ゲート５２とを有する。 【選択図】図４ A solid-state imaging device capable of at least suppressing dark current, a method of manufacturing the same, and a camera including the solid-state imaging device. A solid-state imaging device according to this embodiment includes a wiring layer on a first surface side of a substrate and receives light from the second surface side of the substrate. The solid-state imaging device is formed on the substrate 30 and is arranged on the first surface of the substrate 30 adjacent to the light receiving unit 31 and accumulated in the light receiving unit 31. It has a transfer gate 51 that transfers signal charges, and a control gate 52 that is disposed on the first surface of the substrate 30 so as to overlap the light receiving portion 31 and controls the potential in the vicinity of the first surface of the light receiving portion 31. [Selection] Figure 4

Inventors

• 👤 Tetsuji Yamaguchi
• 👤 哲司 山口
• 👤 Yasushi Maruyama
• 👤 康 丸山
• 👤 Takashi Ando
• 👤 崇志 安藤
• 👤 Susumu Hiyama
• 👤 晋 檜山
• 👤 Hiroko Ogishi
• 👤 裕子 大岸

Bibliographic Details