Insulating heat sink for semiconductor device and method of manufacturing the same

Abstract

Abstract Translated from Japanese (57)【要約】 【課題】 温度変化に対する寿命向上と放熱性に優れた 半導体装置を得るために、半導体装置の絶縁性放熱板お よびその製造方法を提供する。 【解決手段】 この発明に係わる半導体装置の絶縁性放 熱板およびその製造方法は、放熱板を炭素繊維複合Ａｌ または炭素繊維複合Ａｌ合金とし、絶縁板はＣｕ層また はＡｌ層が接合されたＡｌＮとし、絶縁板と放熱板の接 合材はＳｎ−Ｐｂ系合金または導電性樹脂とするもので ある。さらにこの発明の製造方法は、絶縁板と放熱板を Ｓｎ−Ｐｂ系合金で接合する際に、接合材が固化する前 に板厚方向に引張力を与える。また放熱板の炭素繊維複 合Ａｌまたは炭素繊維複合Ａｌ合金の表面のＮｉメッキ 層は、無電解法と電解法を併用する。 [PROBLEMS] To provide an insulating radiator plate for a semiconductor device and a method for manufacturing the same, in order to obtain a semiconductor device having an improved life with respect to a temperature change and excellent heat dissipation. SOLUTION: The insulating radiator of the semiconductor device according to the present invention and the method of manufacturing the same are characterized in that the radiator is made of carbon fiber composite Al. Alternatively, a carbon fiber composite Al alloy is used, the insulating plate is AlN to which a Cu layer or an Al layer is bonded, and the bonding material between the insulating plate and the heat radiating plate is a Sn-Pb alloy or a conductive resin. Further, in the manufacturing method of the present invention, when the insulating plate and the heat radiating plate are joined with the Sn-Pb-based alloy, a tensile force is applied in the thickness direction before the joining material is solidified. For the Ni plating layer on the surface of the carbon fiber composite Al or the carbon fiber composite Al alloy of the heat sink, both the electroless method and the electrolytic method are used.

Inventors

• 👤 Takefumi Ito
• 👤 武文 伊藤
• 👤 Akira Maeda
• 👤 晃 前田

Bibliographic Details