METHOD FOR MANUFACTURING AN INSULATED INSULATED LAYER IN A SEMICONDUCTOR SUBSTRATE, BY ION IMPLANTATION

Abstract

Abstract Translated from French PROCEDE DE FABRICATION D'UNE COUCHE ISOLANTE ENTERREE DANS UN SUBSTRAT SEMI-CONDUCTEUR, PAR IMPLANTATION IONIQUE. CE PROCEDE CONSISTE A REALISER UN MASQUE 6, 8 SUR LES REGIONS DU SUBSTRAT DANS LESQUELLES SERONT REALISEES LES ZONES ACTIVES, A REALISER UNE IMPLANTATION IONIQUE 10 D'OXYGENE OU D'AZOTE DANS LE SUBSTRAT 2 A TRAVERS LE MASQUE 6, 8 SERVANT A FORMER PAR DISPERSION ET DIFFUSION LATERALES F DANS LE SUBSTRAT 2 DES IONS IMPLANTES, UNE COUCHE ISOLANTE 14 D'OXYDE OU DE NITRURE CONTINUE ET ENTERREE DANS LE SUBSTRAT 2, ET A REALISER EVENTUELLEMENT UN RECUIT DU SUBSTRAT 2 IMPLANTE SERVANT A RENFORCER LA CONTINUITE DE LA COUCHE ISOLANTE 14 PAR DIFFUSION LATERALE DES IONS IMPLANTES. METHOD OF MANUFACTURING AN INSULATING LAYER BURIED IN A SEMICONDUCTOR SUBSTRATE, BY IONIC IMPLANTATION. THIS PROCESS CONSISTS OF MAKING A MASK 6, 8 ON THE REGIONS OF THE SUBSTRATE IN WHICH THE ACTIVE ZONES WILL BE CARRIED OUT, IN CARRYING OUT AN IONIC IMPLANTATION 10 OF OXYGEN OR NITROGEN IN THE SUBSTRATE 2 THROUGH THE MASK 6, 8 SERVING TO FORM BY LATERAL DISPERSION AND DIFFUSION F IN THE SUBSTRATE 2 OF THE IMPLANTED IONS, AN INSULATING LAYER 14 OF OXIDE OR NITRIDE CONTINUOUS AND BURIED IN THE SUBSTRATE 2, AND TO POSSIBLY REALIZE THE IMPLANTED SUBSTRATE 2 TO REINFORCE THE CONTINUITY INSULATION 14 BY LATERAL DIFFUSION OF IMPLANT IONS.

Inventors

• 👤 Michel Bruel
• 👤 Jean Du Port De Poncharra

Bibliographic Details