Anion deficient fluoride thin films - used in prodn. of galvanic cells and formed by vapour deposition on substrates in microelectronics

Abstract

Abstract Thin film anionic fluoride conductors consists of solid solns. >=2 fluorides forming anion deficient cpds. is the cations of these fluorides, at least one of which has a valency different from that of the others, are chosen such that the conductivity of the resulting conductor is high enough at the operating temp. specifically the fluorides conductor resulting from two fluorides MFx and M'Fy has formula M(1-z) M'z F(x+z(y-x)) where M and M' are cations with respective valencies x and y, and z is a number chosen in a region which is a function of the pair of cations, the limits of which are imposed by the possible limits of solid soln. between MFx and M'Fy. Also claimed are galvanic cells of the type M/fluoride/M' where the fluoride and the cations are formed in thin layers on a substrate by vapour deposition. In partic they are used as layered batteries in micro electronics.

Inventors

• 👤 Yves Danto
• 👤 Jacques Daniel Pistre
• 👤 Patrick Smutek
• 👤 Jean Salardenne
• 👤 Claude Lucat
• 👤 Jean-Maurice Reau
• 👤 Josyk Portier
• 👤 Paul Hagenmuller

Bibliographic Details