PROCESS FOR DEPOSITING POLYCRYSTALLINE SEMICONDUCTOR MATERIAL

Abstract

Abstract Localised layers of polycrystalline material are formed on a monocrystalline slab without the need for complex chemical processes and without disturbance of surfaces other than those under the polycrystalline layers. The area to carry this layer is subjected to a laser beam or an electron beam such as to disrupt the crystal lattice to a depth not greater than 1000 Angstroms. The beam is swept over the area in such a way that a mask is made unnecessary and the polycrystalline material is laid using an orthodox epitaxial technique. Using silicon, resistivities of the order of 106 OHM/CM may be achieved, reducing carrier lifetimes and capacity effects.

Inventors

• 👤 Hubert Lauvray
• 👤 Johannes Meuleman

Bibliographic Details