Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
148 words
A GaN-based semiconductor integrated circuit comprising a plurality of types of GaN-based semiconductor devices integrated on a substrate, wherein one of the plurality of types of GaN-based semiconductor devices includes a Schottky diode, the Schottky diode includes a GaN-based semiconductor layer, a first anode and a second anode, wherein the first anode is joined to the GaN-based semiconductor layer to form a Schottky junction with a width smaller than the width of the GaN-based semiconductor layer, the second anode is joined to the GaN-based semiconductor layer to form a Schottky junction in a region other than the region in which the first anode is in contact with the GaN-based semiconductor layer, and electrically connected with the first anode, and the Schottky barrier formed between the second anode and the GaN-based semiconductor layer is higher than the Schottky barrier formed between the first anode and the GaN-based semiconductor layer.
Claim 2
Dependent Claim
42 words
The GaN-based semiconductor integrated circuit according to claim 1, wherein the plurality of types of GaN-based semiconductor devices include at least one of an FET, an IGBT, a GTO and a thyristor, as a GaN-based semiconductor device other than the Schottky diode.
Claim 3
Dependent Claim
60 words
The GaN-based semiconductor integrated circuit according to claim 1, wherein the plurality of types of GaN-based semiconductor devices include the Schottky diode and an FET, wherein the FET has a device structure including a layer structure formed of almost the same semiconductor materials as the semiconductor materials forming the layer structure included in the device structure of the Schottky diode.
Claim 4
Dependent Claim
35 words
The GaN-based semiconductor integrated circuit according to claim 1 or 2, wherein a semiconductor device other than a GaN-based semiconductor device is integrated with the plurality of types of GaN-based semiconductor devices, on the substrate.
Claim 5
Dependent Claim
18 words
A power conversion device incorporating a GaN-based semiconductor integrated circuit according to any of claims 1 to 3.
Claim 6
Dependent Claim
14 words
A power conversion device incorporating a GaN-based semiconductor integrated circuit according to claim 4.
Claim 7
Dependent Claim
34 words
The GaN-based semiconductor integrated circuit according to claim 1, wherein the materials forming the first anode include any of metals Ti, Al, Ta, W and Ag or a silicide of any of these metals.
Claim 8
Dependent Claim
25 words
The GaN-based semiconductor integrated circuit according to claim 1, wherein the materials forming the second anode includes any of metals Pt, Ni, Pd and Au.