EP1482550A2
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EP
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Low dielectric constant insulating film and method of forming the same
Assignee: Semiconductor Process Laboratory Co Ltd
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Filing: 2004-05-24
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Granted: —
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Expires: 2024-05-24
Abstract
Abstract The present invention relates to a method of forming a low dielectric constant insulating film. Its constitution has the steps of: (a) forming an insulating film containing Si-CH 3 bond in the skeleton of Si-O-Si on a substrate; (b) irradiating ultraviolet ray to the insulating film in reduced-pressure atmosphere to break CH 3 groups from Si-CH 3 bond in the insulating film; and (c) ejecting the broken CH 3 groups from the insulating film.
Inventors
- 👤 Toshiyuki Ohdaira
- 👤 Yoshimi Shioya
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 21:08
CPC Classifications
H; H01; H01B; H01B3/00; H01B3/18; H01B3/30; H01B3/46; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/56; H10P14/63; H10P14/6326; H10P14/6342; H10P14/65; H10P14/6516; H10P14/6536; H10P14/6538; H10P14/6926; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/665; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; Y; Y10; Y10T; Y10T428/00; Y10T428/31504; Y10T428/31652; Y10T428/31663
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
81 words
A method of forming a low dielectric constant
insulating film, comprising the steps of: (a) forming an insulating film, which contains Si-CH n (n=1, 2, 3) bond in Si-O-Si or another silica
skeleton, on a substrate; (b) irradiating ultraviolet ray to said insulating
film in reduced-pressure atmosphere or reduced-pressure
atmosphere mainly containing inert gas and nitrogen to
break CH n groups from Si-CH n bond in said insulating
film; and (c) ejecting said broken CH n groups from said
insulating film.
Claim 2
Dependent Claim
25 words
The method of forming the low dielectric constant
insulating film according to claim 1, wherein the wavelength of said ultraviolet ray is 120nm or
more.
Claim 3
Dependent Claim
28 words
The method of forming the low dielectric constant
insulating film according to claim 1, wherein the step of said (c) is performed after the step
of said (b).
Claim 4
Dependent Claim
45 words
The method of forming the low dielectric constant
insulating film according to claim 3, wherein the step of said (b) and the step of said (c) are
performed simultaneously by irradiating ultraviolet ray
on said insulating film in the reduced-pressure
atmosphere while heating said substrate.
Claim 5
Dependent Claim
26 words
The method of forming the low dielectric constant
insulating film according to claim 1, wherein the steps of said (a) to said (c) are performed
repeatedly.
Claim 6
Dependent Claim
76 words
The method of forming the low dielectric constant
insulating film according to claim 1, wherein the step of said (a) is a step of applying
electric power to deposition gas, which contains an
organic compound having Si-CH 3 bond and siloxane bond or
an another organic compound having Si-CH 3 bond and
oxidizing gas, to generate plasma so that reaction is
caused to form a CVD insulating film containing said
Si-CH n bond on said substrate.
Claim 7
Dependent Claim
48 words
The method of forming the low dielectric constant
insulating film according to claim 6, wherein the organic compound having said Si-CH 3 bond and
siloxane bond is any one of hexamethyldisiloxane (HMDSO: (CH 3 ) 3 Si-O-Si(CH 3 ) 3 ), octamethylcyclotetrasiloxane (OMCTS), octamethyltrisiloxane (OMTS), and tetramethylcyclotetrasiloxane (TMCTS)
Claim 8
Dependent Claim
64 words
The method of forming the low dielectric constant
insulating film according to claim 6, wherein another organic compound having said Si-CH 3 bond
is any one of dimethyldimethoxysilane (Si(CH 3 ) 2 OCH 3 ) 2 ), tetramethylsilane (Si(CH 3 ) 4 ), trimethylsilane (SiH(CH 3 ) 3 ), dimethylsilane (SiH 2 (CH 3 ) 2 ) and monomethylsilane (SiH 3 (CH 3 )).
Claim 9
Dependent Claim
45 words
The method of forming the low dielectric constant
insulating film according to claim 6, wherein said oxidizing gas is at least one of H 2 O, N 2 O,
CH 3 OH, C 2 H 5 OH, H 2 O 2 and O 2 .
Claim 10
Dependent Claim
69 words
The method of forming the low dielectric constant
insulating film according to claim 6, wherein said deposition gas contains C x H y F z (x is a
positive integer, y is 0 or a positive integer, z is 0
or a positive integer, and y and z do not become 0 at
the same time) in addition to the organic compound
having siloxane bond and the oxidizing gas.
Claim 11
Dependent Claim
33 words
The method of forming the low dielectric constant
insulating film according to claim 10, wherein said C x H y F z is C 4 F 8 and C 2 F 4 .
Claim 12
Dependent Claim
50 words
The method of forming the low dielectric constant
insulating film according to Claim 1, wherein the step of said (a) is a step of coating organic
SOG having Si-CH 3 bond and siloxane bond on said
substrate to form a coated insulating film containing
Si-CH n (n=1, 2, 3) bond.
Claim 13
Dependent Claim
25 words
The method of forming the low dielectric constant
insulating film according to claim 12, wherein said organic SOG having siloxane bond is
alkylsilsesquioxane polymer (MSQ).
Claim 14
Dependent Claim
79 words
A low dielectric constant insulating film characterized in having a low dielectric constant and
sufficient mechanical strength on the basis of an
initial insulating film being non-porous or porous and
having Si-CH 3 bond with respect to the silica skeleton
of Si-O-Si, or Si-O other than Si-O-Si, wherein CH 3 group in said initial insulating film is broken by
ultraviolet irradiation in reduced-pressure atmosphere
and said CH 3 group is ejected from said initial
insulating film by heat treatment.
References Cited (Backward Citations)
No citation records indexed.
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