EP1017100A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Three-dimensional device
Assignee: Seiko Epson Corp
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Filing: 1999-02-24
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Granted: —
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Expires: 2019-02-24
Abstract
Abstract A memory IC 10a includes a substrate (substrate on the transfer destination side) 21, and a memory cell array 71, a memory cell array 72, and a memory cell array 73 deposited on the substrate 21. The memory cell arrays 71, 72, and 73 are deposited, in that order, from the lower side in Fig. 21 by a method for transferring a thin film configuration. The method for the transfer includes the steps of forming a thin film device layer (memory cell array) on a support substrate with a separable layer therebetween, and irradiating the separable layer with light to cause a separation in the separable layer and /or at an interface so that the thin film device layer on the support substrate is transferred to the substrate 21.
Inventors
- 👤 Tatsuya Seiko Epson Corp. SHIMODA
- 👤 Satoshi Seiko Epson Corp. INOUE
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 19:55
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/021; H10D86/0214; H10D99/00; H10B; H10B10/00; H10B10/12; H10B10/125; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/6732; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D30/6758; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10D88/00; H10D88/01; H10D88/101; H10P; H10P72/00; H10P72/70; H10P72/74; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10W; H10W10/00; H10W10/10; H10W10/181; H10W72/00; H10W90/00; H10W90/20; H10W90/293; H10F; H10F30/00; H10F30/20; H10F30/21; H10P72/743; H10P72/7432; H10P72/7434; H10W90/26; H10W90/701; H10W90/721; H10W90/722; Y; Y10; Y10S; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
47 words
A three-dimensional device comprising a plurality of
thin film device layers deposited in the thickness direction,
each thin film device layer being disposed in a
predetermined region in the planar direction, wherein at least one of the thin film device layers is
deposited by a transfer method.
Claim 2
Dependent Claim
57 words
A three-dimensional device comprising a plurality of
thin film device layers deposited on a base in the thickness
direction for constituting a three-dimensional circuit, each
thin film device layer constituting a circuit in a
predetermined region extending in the planar direction, wherein at least one of the thin film device layers is
deposited by a transfer method.
Claim 3
Dependent Claim
73 words
A three-dimensional device according to one of Claims
1 and 2, wherein the transfer method comprises the steps of
forming a thin film device layer on a support substrate with
a separable layer therebetween, and irradiating the
separable layer with light to cause a separation in the
separable layer and/or at an interface so that the thin film
device layer on the support substrate is transferred to a
substrate of the three-dimensional device.
Claim 4
Dependent Claim
33 words
A three-dimensional device according to Claim 3,
wherein the separation of the separable layer is caused by
the breakage or weakening of interatomic or intermolecular
bonds in a material constituting the separable layer.
Claim 5
Dependent Claim
27 words
A three-dimensional device according to Claim 3,
wherein the separation of the separable layer is caused by
the evolution of gas from material constituting the
separable layer.
Claim 6
Dependent Claim
14 words
A three-dimensional device according to Claim 3,
wherein the light is a laser beam.
Claim 7
Dependent Claim
23 words
A three-dimensional device according to Claim 3,
wherein the separable layer comprises any one of amorphous
silicon, ceramic, metal, and organic polymeric material.
Claim 8
Dependent Claim
35 words
A three-dimensional device according to one of Claims
1 and 2, wherein the thin film device layer comprises
connecting electrodes, and the connecting electrodes
electrically connect two adjacent thin film device layers to
each other.
Claim 9
Dependent Claim
22 words
A three-dimensional device according to Claim 8,
wherein the connecting electrodes are provided on both
surfaces of the thin film device layer.
Claim 10
Dependent Claim
25 words
A three-dimensional device according to Claim 8,
wherein two adjacent thin film device layers are joined to
each other with an anisotropic conductive film therebetween.
Claim 11
Dependent Claim
50 words
A three-dimensional device according to one of Claims
1 and 2, wherein in two selected layers of the thin film
device layers, one layer has a light-emitting section and
the other layer has a light-receiving section, the light-emitting
section and the light-receiving section enabling
optical communication between the two layers.
Claim 12
Dependent Claim
34 words
A three-dimensional device according to one of Claims
1 and 2, wherein the thin film device layer deposited by
transferring is formed simultaneously with at least one of
the other thin film device layers.
Claim 13
Dependent Claim
28 words
A three-dimensional device according to one of Claims
1 and 2, wherein at least one of the thin film device layers
comprises a plurality of thin film transistors.
Claim 14
Dependent Claim
26 words
A three-dimensional device according to one of Claims
1 and 2, wherein at least one of the thin film device layers
comprises a memory cell array.
Claim 15
Dependent Claim
25 words
A three-dimensional device according to one of Claims
1 and 2, wherein a plurality of layers among the thin film
device layers comprise one memory.
Claim 16
Dependent Claim
41 words
A three-dimensional device according to one of Claims
1 and 2, wherein at least one of the thin film device layers
comprises a memory cell array, and at least one of the other
thin film device layers comprises a logic circuit.
Claim 17
Dependent Claim
16 words
A three-dimensional device according to Claim 16,
wherein the logic circuit drives the memory cell array.
Claim 18
Dependent Claim
24 words
A three-dimensional device according to Claim 16,
wherein the logic circuit and the memory cell array are
formed in accordance with different design rules.
Claim 19
Dependent Claim
24 words
A three-dimensional device according to Claim 16,
wherein the logic circuit and the memory cell array are
formed in accordance with different design parameters.
Claim 20
Dependent Claim
22 words
A three-dimensional device according to Claim 16,
wherein the logic circuit and the memory cell array are
formed by different fabricating processes.
References Cited (Backward Citations)
No citation records indexed.
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