EP1011149A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor memory device and method for producing the same
Assignee: Panasonic Holdings Corp
•
Filing: 1999-12-14
•
Granted: —
•
Expires: 2019-12-14
Abstract
Abstract A semiconductor memory device (100) includes a semiconductor substrate (1) having a channel therein; a gate insulating layer (4) formed of a ferroelectric material provided on the semiconductor substrate (1); and a gate electrode (5) provided on the gate insulating layer (4). The ferroelectric material includes a nitrogen (N) and at least one element selected from the group consisting of Mg, Sr, Ba and Ca.
Inventors
- 👤 Akiyoshi Tamura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 03:13
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/701; H10D64/00; H10D64/01; H10D64/031; H10D64/033
Claims Analysis
Total Claims: 50
Claim 1
Independent Claim
60 words
A semiconductor memory device, comprising: a semiconductor substrate having a channel therein; a gate insulating layer formed of a ferroelectric
material provided on the semiconductor substrate; and a gate electrode provided on the gate insulating
layer, wherein the ferroelectric material includes a
nitrogen (N) and at least one element selected from the group
consisting of Mg, Sr, Ba and Ca.
Claim 2
Dependent Claim
53 words
A semiconductor memory device according to claim 1,
wherein the ferroelectric material is represented by formula
(1): A 2 BN 3 where A is one element selected from the group consisting
of Mg, Sr, Ba and Ca, and B is one element selected from
the group consisting of V, Nb, Ta and Mn.
Claim 3
Dependent Claim
67 words
A semiconductor memory device according to claim 1,
wherein the ferroelectric material is represented by formula
(2): (A x B 1-x ) 2 CN 3 where x is in the range of 0≤x≤1, A and B are each one element
selected from the group consisting of Mg, Sr, Ba and Ca,
and C is one element selected from the group consisting of
V, Nb, Ta and Mn.
Claim 4
Dependent Claim
81 words
A semiconductor memory device according to claim 1,
wherein the ferroelectric material is represented by formula
(3): (A x B 1-x ) 2 (C y D 1-y )N 3 where x is in the range of 0≤x≤1, y is in the range of 0≤y≤1,
A and B are each one element selected from the group
consisting of Mg, Sr, Ba and Ca, and C and D are each one
element selected from the group consisting of V, Nb, Ta and
Mn.
Claim 5
Dependent Claim
53 words
A semiconductor memory device according to claim 1,
wherein the ferroelectric material is represented by formula
(4): AB 2 N 4 where A is one element selected from the group consisting
of Mg, Sr, Ba and Ca, and B is one element selected from
the group consisting of V, Nb, Ta and Mn.
Claim 6
Dependent Claim
67 words
A semiconductor memory device according to claim 1,
wherein the ferroelectric material is represented by formula
(5): (A x B 1-x )C 2 N 4 where x is in the range of 0≤x≤1, A and B are each one element
selected from the group consisting of Mg, Sr, Ba and Ca,
and C is one element selected from the group consisting of
V, Nb, Ta and Mn.
Claim 7
Dependent Claim
81 words
A semiconductor memory device according to claim 1,
wherein the ferroelectric material is represented by formula
(6): (A x B 1-x )(C y D 1-y ) 2 N 4 where x is in the range of 0≤x≤1, y is in the range of 0≤y≤1,
A and B are each one element selected from the group
consisting of Mg, Sr, Ba and Ca, and C and D are each one
element selected from the group consisting of V, Nb, Ta and
Mn.
Claim 8
Dependent Claim
40 words
A semiconductor memory device according to claim 1,
wherein the ferroelectric material is represented by formula
(7): A 2 BN 2 where A and B are each one element selected from the group
consisting of Mg, Sr, Ba and Ca.
Claim 9
Dependent Claim
64 words
A semiconductor memory device according to claim 1,
wherein the ferroelectric material is represented by formula
(8): (A x B 1-x ) 2 (C y D 1-y )N 2 where x is in the range of 0≤x≤1, y is in the range of 0≤y≤1,
A, B, C and D are each one element selected from the group
consisting of Mg, Sr, Ba and Ca.
Claim 10
Dependent Claim
65 words
A semiconductor memory device according to claim 1,
wherein the ferroelectric material is represented by formula
(9): A 3 B 2 N 4 where A is one element selected from the group consisting
of Mg, Sr, Ba and Ca, and B is one element selected from
the group consisting of Al, Y, La, Sc, Co, Gd, Ce, Nd, Er,
V, Ti, Ta, Nb and Mn.
Claim 11
Dependent Claim
79 words
A semiconductor memory device according to claim 1,
wherein the ferroelectric material is represented by formula
(10): (A x B 1-x ) 3 C 2 N 4 where x is in the range of 0≤x≤1, A and B are each one element
selected from the group consisting of Mg, Sr, Ba and Ca,
and C is one element selected from the group consisting of
Al, Y, La, Sc, Co, Gd, Ce, Nd, Er, V, Ti, Ta, Nb and Mn.
Claim 12
Dependent Claim
93 words
A semiconductor memory device according to claim 1,
wherein the ferroelectric material is represented by formula
(11): (A x B 1-x ) 3 (C y D 1-y ) 2 N 4 where x is in the range of 0≤x≤1, y is in the range of 0≤y≤1,
A and B are each one element selected from the group
consisting of Mg, Sr, Ba and Ca, and C and D are each one
element selected from the group consisting of Al, Y, La,
Sc, Co, Gd, Ce, Nd, Er, V, Ti, Ta, Nb and Mn.
Claim 13
Dependent Claim
65 words
A semiconductor memory device according to claim 1,
wherein the ferroelectric material is represented by formula
(12): A 3 B 5 N 7 where A is one element selected from the group consisting
of Mg, Sr, Ba and Ca, and B is one element selected from
the group consisting of Al, Y, La, Sc, Co, Gd, Ce, Nd, Er,
V, Ti, Ta, Nb and Mn.
Claim 14
Dependent Claim
79 words
A semiconductor memory device according to claim 1,
wherein the ferroelectric material is represented by formula
(13): (A x B 1-x ) 3 C 5 N 7 where x is in the range of 0≤x≤1, A and B are each one element
selected from the group consisting of Mg, Sr, Ba and Ca,
and C is one element selected from the group consisting of
Al, Y, La, Sc, Co, Gd, Ce, Nd, Er, V, Ti, Ta, Nb and Mn.
Claim 15
Dependent Claim
93 words
A semiconductor memory device according to claim 1,
wherein the ferroelectric material is represented by formula
(14): (A x B 1-x ) 3 (C y D 1-y ) 5 N 7 where x is in the range of 0≤x≤1, y is in the range of 0≤y≤1,
A and B are each one element selected from the group
consisting of Mg, Sr, Ba and Ca, and C and D are each one
element selected from the group consisting of Al, Y, La,
Sc, Co, Gd, Ce, Nd, Er, V, Ti, Ta, Nb and Mn.
Claim 16
Dependent Claim
86 words
A semiconductor memory device according to claim 1,
wherein the ferroelectric material is represented by formula
(15): A 2 B 3 C 2 N 7 where A is one element selected from the group consisting
of Mg, Sr, Ba and Ca, B is one element selected from the
group consisting of Al, Y, La, Sc, Co, Gd, Ce, Nd, Er, V,
Ti, Ta, Nb and Mn, and C is one element selected from the
group consisting of Ti, Ta, Mn, Co, Zr, Hf, V and Nb.
Claim 17
Dependent Claim
100 words
A semiconductor memory device according to claim 1,
wherein the ferroelectric material is represented by formula
(16): (A x B 1-x ) 2 C 3 D 2 N 7 where x is in the range of 0≤x≤1, A and B are each one element
selected from the group consisting of Mg, Sr, Ba and Ca,
C is one element selected from the group consisting of Al,
Y, La, Sc, Co, Gd, Ce, Nd, Er, V, Ti, Ta, Nb and Mn, and
D is one element selected from the group consisting of Ti,
Ta, Mn, Co, Zr, Hf, V and Nb.
Claim 18
Dependent Claim
128 words
A semiconductor memory device according to claim 1,
wherein the ferroelectric material is represented by formula
(17): (A x B 1-x ) 2 (C y D 1-y ) 3 (E z F 1-z ) 2 N 7 where x is in the range of 0≤x≤1, y is in the range of 0≤y≤1,
z is in the range of 0≤z≤1, A and B are each one element
selected from the group consisting of Mg, Sr, Ba and Ca,
C and D are each one element selected from the group
consisting of Al, Y, La, Sc, Co, Gd, Ce, Nd, Er, V, Ti, Ta,
Nb and Mn, and E and F are each one element selected from
the group consisting of Ti, Ta, Mn, Co, Zr, Hf, V and Nb.
Claim 19
Dependent Claim
36 words
A semiconductor memory device according to claim 1,
further comprising a buffer layer between the semiconductor
substrate and the gate insulating layer, wherein the buffer
layer is formed of one of SiN and SiO 2 .
Claim 20
Independent Claim
67 words
A method for producing a semiconductor memory device,
comprising the steps of: forming a gate insulating layer formed of a
ferroelectric material containing nitrogen and at least one
element selected from the group consisting of Mg, Sr, Ba
and Ca on a semiconductor substrate; and heat-treating the gate insulating layer formed on
the semiconductor substrate in one of an ammonia atmosphere
and a nitrogen radical ion-containing atmosphere.
Claim 21
Dependent Claim
21 words
A method for producing a semiconductor memory device
according to claim 20, wherein the ammonia atmosphere is
an ammonia plasma atmosphere.
Claim 22
Dependent Claim
58 words
A semiconductor memory device, comprising: a semiconductor substrate having a channel therein; a gate insulating layer provided on the
semiconductor substrate; a gate electrode provided on the gate insulating
layer; a buffer layer formed of SiN provided between the
semiconductor substrate and the gate insulating layer, wherein the gate insulating layer is formed of a
fluoride ferroelectric material.
Claim 23
Independent Claim
70 words
A method for producing a semiconductor memory device,
comprising the steps of: forming an SiO 2 layer on a semiconductor substrate; nitriding the SiO 2 layer in one of an ammonia
atmosphere, an N 2 O atmosphere, and a nitrogen radical
ion-containing atmosphere; forming a gate insulating layer formed of a fluoride
ferroelectric material on the nitrided SiO 2 layer; and forming a gate electrode on the gate insulating
layer.
Claim 24
Dependent Claim
21 words
A method for producing a semiconductor memory device
according to claim 23, wherein the ammonia atmosphere is
an ammonia plasma atmosphere.
Claim 25
Independent Claim
68 words
A method for producing a semiconductor memory device,
comprising the steps of: forming a gate insulating layer formed of a fluoride
ferroelectric material containing fluorine and at least one
element selected from the group consisting of Mg, Sr, Ba
and Ca on a semiconductor substrate; and nitriding the gate insulating layer formed on the
semiconductor substrate in one of an ammonia atmosphere and
a nitrogen radical ion-containing atmosphere.
Claim 26
Dependent Claim
21 words
A method for producing a semiconductor memory device
according to claim 25, wherein the ammonia atmosphere is
an ammonia plasma atmosphere.
Claim 27
Dependent Claim
34 words
A semiconductor memory device according to claim 22,
wherein the fluoride ferroelectric material is one material
selected from the group consisting of BaMgF 4 , BaCoF 4 , BaNiF 4 and BaZnF 4 .
Claim 28
Dependent Claim
38 words
A method for producing a semiconductor memory device
according to claim 23, wherein the fluoride ferroelectric
material is one material selected from the group consisting
of BaMgF 4 , BaCoF 4 , BaNiF 4 and BaZnF 4 .
Claim 29
Dependent Claim
62 words
A semiconductor memory device according to claim 22,
wherein the fluoride ferroelectric material is represented
by formula (18): ABF 5 where A is one element selected from the group consisting
of Mg, Sr, Ba and Ca, and B is one element selected from
the group consisting of Al, Y, La, Sc, Co, Gd, Ce, Nd, Er,
V, Ti, Ta, Nb and Mn.
Claim 30
Dependent Claim
66 words
A method for producing a semiconductor memory device
according to claim 23, wherein the fluoride ferroelectric
material is represented by formula (18): ABF 5 where A is one element selected from the group consisting
of Mg, Sr, Ba and Ca, and B is one element selected from
the group consisting of Al, Y, La, Sc, Co, Gd, Ce, Nd, Er,
V, Ti, Ta, Nb and Mn.
Claim 31
Dependent Claim
90 words
A semiconductor memory device according to claim 22,
wherein the fluoride ferroelectric material is represented
by formula (19): (A x B 1-x )(C y D 1-y )F 5 where x is in the range of 0≤x≤1, y is in the range of 0≤y≤1,
A and B are each one element selected from the group
consisting of Mg, Sr, Ba and Ca, and C and D are each one
element selected from the group consisting of Al, Y, La,
Sc, Co, Gd, Ce, Nd, Er, V, Ti, Ta, Nb and Mn.
Claim 32
Dependent Claim
94 words
A method for producing a semiconductor memory device
according to claim 23, wherein the fluoride ferroelectric
material is represented by formula (19): (A x B 1-x )(C y D 1-y )F 5 where x is in the range of 0≤x≤1, y is in the range of 0≤y≤1,
A and B are each one element selected from the group
consisting of Mg, Sr, Ba and Ca, and C and D are each one
element selected from the group consisting of Al, Y, La,
Sc, Co, Gd, Ce, Nd, Er, V, Ti, Ta, Nb and Mn.
Claim 33
Dependent Claim
56 words
A semiconductor memory device according to claim 22,
wherein the fluoride ferroelectric material is represented
by formula (20): ABF 6 where A is one element selected from the group consisting
of Mg, Sr, Ba and Ca, and B is one element selected from
the group consisting of Ti, Ta, Mn, Co, Zr, Hf, V and Nb.
Claim 34
Dependent Claim
60 words
A method for producing a semiconductor memory device
according to claim 23, wherein the fluoride ferroelectric
material is represented by formula (20): ABF 6 where A is one element selected from the group consisting
of Mg, Sr, Ba and Ca, and B is one element selected from
the group consisting of Ti, Ta, Mn, Co, Zr, Hf, V and Nb.
Claim 35
Dependent Claim
84 words
A semiconductor memory device according to claim 22,
wherein the fluoride ferroelectric material is represented
by formula (21): (A x B 1-x )(C y D 1-y )F 6 where x is in the range of 0≤x≤1, y is in the range of 0≤y≤1,
A and B are each one element selected from the group
consisting of Mg, Sr, Ba and Ca, and C and D are each one
element selected from the group consisting of Ti, Ta, Mn,
Co, Zr, Hf, V and Nb.
Claim 36
Dependent Claim
87 words
A method for producing semiconductor memory device
according to claim 23, wherein the fluoride ferroelectric
material is represented by formula (21): (A x B 1-x )(C y D 1-y )F 6 where x is in the range of 0≤x≤1, y is in the range of 0≤y≤1,
A and B are each one element selected from the group
consisting of Mg, Sr, Ba and Ca, and C and D are each one
element selected from the group consisting of Ti, Ta, Mn,
Co, Zr, Hf, V and Nb.
Claim 37
Dependent Claim
66 words
A semiconductor memory device according to claim 22,
wherein the fluoride ferroelectric material is represented
by formula (22): A 5 B 3 F 19 where A is one element selected from the group consisting
of Mg, Sr, Ba and Ca, and B is one element selected from
the group consisting of Al, Y, La, Sc, Co, Gd, Ce, Nd, Er,
V, Ti, Ta, Nb and Mn.
Claim 38
Dependent Claim
70 words
A method for producing a semiconductor memory device
according to claim 23, wherein the fluoride ferroelectric
material is represented by formula (22): A 5 B 3 F 19 where A is one element selected from the group consisting
of Mg, Sr, Ba and Ca, and B is one element selected from
the group consisting of Al, Y, La, Sc, Co, Gd, Ce, Nd, Er,
V, Ti, Ta, Nb and Mn.
Claim 39
Dependent Claim
94 words
A semiconductor memory device according to claim 22,
wherein the fluoride ferroelectric material is represented
by formula (23): (A x B 1-x ) 5 (C y D 1-y ) 3 F 19 where x is in the range of 0≤x≤1, y is in the range of 0≤y≤1,
A and B are each one element selected from the group
consisting of Mg, Sr, Ba and Ca, and C and D are each one
element selected from the group consisting of Al, Y, La,
Sc, Co, Gd, Ce, Nd, Er, V, Ti, Ta, Nb and Mn.
Claim 40
Dependent Claim
98 words
A method for producing a semiconductor memory device
according to claim 23, wherein the fluoride ferroelectric
material is represented by formula (23): (A x B 1-x ) 5 (C y D 1-y ) 3 F 19 where x is in the range of 0≤x≤1, y is in the range of 0≤y≤1,
A and B are each one element selected from the group
consisting of Mg, Sr, Ba and Ca, and C and D are each one
element selected from the group consisting of Al, Y, La,
Sc, Co, Gd, Ce, Nd, Er, V, Ti, Ta, Nb and Mn.
Claim 41
Dependent Claim
83 words
A semiconductor memory device, comprising: a semiconductor substrate having a channel therein; a buffer layer formed of at least one of MgSiO 3 , Mg 2 SiO 4 , SrSiO 3 , Sr 2 SiO 4 , (Mg x Sr 1-x )SiO 3 and (Mg x Sr 1-x ) 2 SiO 4 (where 0≤x≤1) provided on the semiconductor substrate; a gate insulating layer formed of a ferroelectric
material provided on the buffer layer; and a gate electrode provided on the gate insulating
layer.
Claim 42
Dependent Claim
26 words
A semiconductor memory device according to claim 41,
wherein the ferroelectric material includes at least one
element selected from the group consisting of Mg and Sr.
Claim 43
Dependent Claim
41 words
A semiconductor memory device according to claim 41,
wherein the ferroelectric material is formed of at least
one material selected from the group consisting of
(Ba x Sr 1-x )MgF 4 and Ba(Mg x Sr 1-x )F 4 , where 0≤x≤1.
Claim 44
Independent Claim
62 words
A method for producing a semiconductor memory device,
comprising the steps of: forming a buffer layer formed of SiN on an Si
substrate; forming an SrTiO 3 layer on the buffer layer formed
of SiN by sputtering; forming a gate insulating layer formed of a
ferroelectric material on the SrTiO 3 layer; and forming a gate electrode on the gate insulating
layer.
Claim 45
Dependent Claim
24 words
A method for producing a semiconductor memory device
according to claim 44, wherein the buffer layer is formed
by directly nitriding the Si substrate.
Claim 46
Independent Claim
92 words
A method for producing a semiconductor memory device,
comprising the steps of: forming a buffer layer formed of SiO 2 on an Si
substrate; nitriding the buffer layer formed of SiO 2 using one
of an ammonia atmosphere, an N 2 O gas atmosphere, and a
nitrogen radical ion-containing atmosphere; forming an SrTiO 3 layer on the buffer layer formed
of the nitrided SiO 2 by sputtering; forming a gate insulating layer formed of a
ferroelectric material on the SrTiO 3 layer; and forming a gate electrode on the gate insulating
layer.
Claim 47
Independent Claim
54 words
A method for producing a semiconductor memory device,
comprising the steps of: forming a thin TiSr layer an Si substrate; forming an SrTiO 3 layer on the thin TiSr layer; forming a gate insulating layer formed of
ferroelectric material on the SrTiO 3 layer; and forming a gate electrode on the gate insulating
layer.
Claim 48
Dependent Claim
33 words
A method for producing a semiconductor memory device
according to claim 47, wherein the SrTiO 3 layer is formed
by sputtering where the Si substrate has a temperature of
about 300°C or less.
Claim 49
Dependent Claim
49 words
A method for producing a semiconductor memory device
according to claim 47, wherein the SrTiO 3 layer is formed
on the thin TiSr layer by sputtering, and the step of forming
the SrTiO 3 layer includes the steps of: using an Ar gas, and using an Ar/O 2 gas.
Claim 50
Dependent Claim
43 words
A method for producing a semiconductor memory device
according to claim 47, further including the step of
heat-treating the SrTiO 3 layer in one of an oxygen gas
atmosphere and an ozone-containing oxygen gas atmosphere
at a temperature of about 300°C or less.
References Cited (Backward Citations)
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