Patent EP0282198A2 successfully refreshed from Google Patents.
EP0975017A2
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Silicon oxynitride cap for fluorinated silicate glass film in intermetal dielectric semiconductor fabrication
Assignee: Infineon Technologies AG
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Filing: 1999-07-06
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Granted: —
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Expires: 2019-07-06
Abstract
Abstract A semiconductor device and method of forming a patterned conductive layer on a semiconductor substrate are provided so as to prevent fluorine substance outflow from a fluorinated silicate glass (FSG) layer thereon and simultaneously so as to suppress back reflection of light waves into a photoresist layer during photolithographic processing. The substrate is coated in turn with a conductive layer, a dielectric (e.g., silicon dioxide) liner, a FSG layer, a silicon oxynitride layer preventing fluorine substance outflow therethrough from the FSG layer and also forming an antireflective coating (ARC), and a photoresist layer. The photoresist layer is exposed and developed to uncover pattern portions of the underlying silicon oxynitride layer. The uncovered pattern portions of the silicon oxynitride ARC layer and corresponding underlying portions of the FSG layer and dielectric liner are then removed, e.g., by,a single dry etching step, to expose pattern portions of the conductive layer for metallization. Upon metallization, the substrate is provided with a combination of the FSG layer and silicon oxynitride layer, in which the silicon oxynitride layer prevents fluorine substance outflow therethrough from the underlying FSG layer to an overlying conductive layer.
Inventors
- 👤 Gill Yong Lee
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 17:26
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6924; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6516; H10P14/6548; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/6927; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/081; H10W20/40; H10W20/45; H10W20/48; H10W74/00; H10W74/10; H10W74/131; H10W74/147
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
58 words
A semiconductor device comprising a substrate
having a combination of a fluorinated silicate glass
layer and a silicon oxynitride cap layer thereon, the
silicon oxynitride cap layer being disposed in overlying
covering relation to the fluorinated silicate glass layer
sufficiently for preventing fluorine substance outflow
therethrough from the fluorinated silicate glass layer
and for forming an antireflective coating.
Claim 2
Dependent Claim
56 words
The semiconductor device of claim 1 including a
conductive layer disposed in overlying relation to the
silicon oxynitride cap layer, the silicon oxynitride cap
layer being arranged relative to the underlying
fluorinated silicate glass layer and overlying conductive
layer sufficiently for preventing fluorine substance
outflow therethrough from the fluorinated silicate glass
layer to the conductive layer.
Claim 3
Dependent Claim
14 words
The semiconductor device of claim 2 wherein the
conductive layer is formed of metal.
Claim 4
Dependent Claim
42 words
The semiconductor device of claim 1 wherein the
fluorinated silicate glass layer has a thickness of about
1,000-10,000 angstroms and the silicon oxynitride layer
has a thickness of about 100-2,000 angstroms, and wherein
the silicon oxynitride comprises SiO 0.5-1.5 N 0.1-1.5 .
Claim 5
Dependent Claim
119 words
A semiconductor device comprising a substrate
having: a patterned conductive layer thereon; a dielectric liner disposed on the patterned
conductive layer; a combination of a fluorinated silicate glass
layer and a silicon oxynitride cap layer disposed on the
dielectric liner, the silicon oxynitride cap layer being
disposed in overlying covering relation to the
fluorinated silicate glass layer; and a further conductive layer disposed in
overlying relation to the silicon oxynitride cap layer
and in conductive contact with the patterned conductive
layer; the silicon oxynitride cap layer being arranged
relative to the underlying fluorinated silicate glass
layer and overlying further conductive layer sufficiently
for preventing fluorine substance outflow therethrough
from the fluorinated silicate glass layer to the further
conductive layer.
Claim 6
Dependent Claim
20 words
The semiconductor device of claim 5 wherein the
patterned conductive layer and further conductive layer
are each formed of metal.
Claim 7
Dependent Claim
42 words
The semiconductor device of claim 5 wherein the
fluorinated silicate glass layer has a thickness of about
1,000-10,000 angstroms and the silicon oxynitride layer
has a thickness of about 100-2,000 angstroms, and wherein
the silicon oxynitride comprises SiC 0.5-1.5 N 0.1-1.5 .
Claim 8
Independent Claim
134 words
A method of forming a patterned conductive
layer on a semiconductor substrate comprising the steps
of: providing a conductive layer on a surface of a
semiconductor substrate; providing a dielectric liner on the conductive
layer; providing a fluorinated silicate glass layer on
the dielectric liner; providing a silicon oxynitride layer on the
fluorinated silicate glass layer sufficiently to prevent
fluorine substance outflow therethrough from the
fluorinated silicate glass layer and for forming an
antireflective coating; providing a photoresist layer on the silicon
oxynitride layer; selectively exposing and developing the
photoresist layer to uncover selective pattern portions
of the underlying silicon oxynitride layer; and removing the uncovered pattern portions of the
silicon oxynitride layer and corresponding underlying
portions of the fluorinated silicate glass layer and
dielectric liner to expose pattern portions of the
conductive layer.
Claim 9
Dependent Claim
14 words
The method of claim 8 wherein the dielectric
liner is formed of silicon dioxide.
Claim 10
Dependent Claim
36 words
The method of claim 8 wherein the uncovered
pattern portions of the silicon oxynitride layer and
corresponding underlying portions of the fluorinated
silicate glass layer and dielectric liner are all removed
together in an etching step.
Claim 11
Dependent Claim
22 words
The method of claim 8 including providing a
dielectric cap layer between the fluorinated silicate
glass layer and the silicon oxynitride layer.
Claim 12
Dependent Claim
15 words
The method of claim 11 wherein the dielectric
cap layer is formed of silicon dioxide.
Claim 13
Dependent Claim
21 words
The method of claim 11 wherein the dielectric
cap layer is provided in a thickness of up to about
20,000 angstroms.
Claim 14
Dependent Claim
20 words
The method of claim 11 wherein the dielectric
cap layer is polished before the silicon oxynitride layer
is provided thereon.
Claim 15
Dependent Claim
18 words
The method of claim 14 wherein the dielectric
cap layer is polished by a chemical mechanical polishing
step.
Claim 16
Dependent Claim
19 words
The method of claim 15 wherein the polished
dielectric cap layer has a resultant thickness of about
0-20,000 angstroms.
Claim 17
Dependent Claim
39 words
The method of claim 11 wherein the uncovered
pattern portions of the silicon oxynitride layer and
corresponding underlying portions of the dielectric cap
layer, fluorinated silicate glass layer and dielectric
liner are all removed together in an etching step.
Claim 18
Dependent Claim
69 words
The method of claim 8 wherein the conductive
layer is provided in a thickness of about 1,000-10,000
angstroms, the dielectric liner is provided in a
thickness of about 100-2,000 angstroms, the fluorinated
silicate glass layer is provided in a thickness of about
1,000-10,000 angstroms, and the silicon oxynitride layer
is provided in a thickness of about 100-2,000 angstroms,
and wherein the silicon oxynitride comprises
SiO 0.5-1.5 N 0.1-1.5 .
Claim 19
Dependent Claim
46 words
The method of claim 8 wherein the photoresist
layer is exposed to light irradiation at a wavelength of
about 193-633 nm, and the silicon oxynitride layer has a
refractive index of about 1.60-3.6 at said wavelength and
an extinction coefficient of about 0.01-2.0 at said
wavelength.
Claim 20
Independent Claim
173 words
A method of forming a patterned conductive
metal layer on a surface of a semiconductor substrate
comprising the steps of: providing a conductive metal layer on a surface
of a semiconductor substrate; providing a dielectric silicon dioxide liner on
the conductive layer; providing a fluorinated silicate glass layer on
the dielectric liner; providing a dielectric silicon dioxide cap
layer on the fluorinated silicate glass layer; providing a silicon oxynitride layer on the
dielectric cap layer and in overlying relation to the
fluorinated silicate glass layer sufficiently to prevent
fluorine substance outflow therethrough from the
fluorinated silicate glass layer and for forming an
antireflective coating; providing a photoresist layer on the silicon
oxynitride layer; selectively exposing and developing the
photoresist layer to uncover selective pattern portions
of the underlying silicon oxynitride layer; and collectively removing together the uncovered
pattern portions of the silicon oxynitride layer and
corresponding underlying portions of the dielectric cap
layer, fluorinated silicate glass layer and dielectric
liner in a single etching step to expose pattern portions
of the conductive layer.
Claim 21
Dependent Claim
26 words
The method of claim 20 wherein the dielectric
cap layer is polished by a chemical mechanical polishing
step before the silicon oxynitride layer is provided
thereon.
Claim 22
Independent Claim
110 words
A method of treating a wafer substrate in
semiconductor fabrication for preventing fluorine
substance outflow from a fluorinated silicate glass layer
thereon to an overlying photoresist layer and
simultaneously for suppressing reflection of light waves
back into the photoresist layer during photolithographic
processing of the photoresist layer to maximize
uniformity of patterned light wave exposure and
development of the photoresist layer, which comprises
interposing a silicon oxynitride layer between the
fluorinated silicate glass layer and the photoresist
layer sufficiently to form a barrier for preventing said
fluorine substance outflow and to form a dielectric
antireflective coating in underlying relation to the
photoresist layer for suppressing said reflection of
light waves.
Claim 23
Dependent Claim
15 words
The method of claim 22 wherein the silicon
oxynitride comprises SiO 0.5-1.5 N 0.1-1.5 .
Claim 24
Dependent Claim
9 words
The product formed by the method of claim 22.
References Cited (Backward Citations)
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