EP0933802B1
Expired / Lapsed
EP
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Process for the production of semiconductor device
Assignee: Tokyo Electron Ltd
•
Filing: 1997-11-11
•
Granted: 2002-04-17
•
Expires: 2017-11-11
Abstract
No abstract record available.
Inventors
- 👤 Takashi Akahori
- 👤 Shuichi 202 Shiroyama New Heights ISHIZUKA
- 👤 Shunichi Endo
- 👤 Takeshi Aoki
- 👤 Tadashi 1004 Dragon Mansion HIRATA
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 12:33
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P50/73; H10P50/28; H10P50/286; H10P50/287; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/40; H10W20/41; H10W20/42; H10W20/45; H10W20/48
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
140 words
A method for producing a semiconductor device, which
comprises the steps of: depositing an insulator film (4, 16) of a fluorine-containing
carbon film on an object to be treated; forming a pattern of a resist film (18, 42) above said
insulator film; and producing a plasma of a treatment gas containing an
oxygen plasma producing gas and by the produced plasma
removing said resist film while etching in said
fluorine-containing carbon film a pattern of holes which
corresponds to the pattern of the resist film;
the method being characterised by the steps of: including in-the treatment gas a proportion of a
silane compound gas, the proportion being selected for
growing a protective coat (199) of SiO 2 on the side walls of
the holes in the insulator film, thereby to reduce the
deterioration of the shape of said side walls.
Claim 2
Dependent Claim
40 words
A method for producing a semiconductor device, as set
forth in claim 1, wherein a reduced non-zero thickness
of said resist film remains on said insulator film when
a desired recessed portion is formed on said insulator
film by etching.
Claim 3
Dependent Claim
42 words
A method for producing a semiconductor device, as set
forth in claim 1, wherein the etch rate of said fluorine-containing
carbon film etched by the oxide plasma is
equal to the etch rate of said resist film etched by the
oxide plasma.
Claim 4
Independent Claim
71 words
A method as claimed in any one of the preceding claims,
including the steps of: depositing a protective coat, resistant to an
oxygen plasma, on said insulator film; forming the resist film on said protective coat;
and
etching said protective coat, where exposed by the
pattern of the resist film, to remove the protective
coat; and removing said resist film while etching said
fluorine containing carbon film by an oxygen plasma.
Claim 5
Dependent Claim
20 words
A method for producing a semiconductor device, as
claimed in claim 4, wherein said protective coat is an
insulator film.
Claim 6
Dependent Claim
20 words
A method for producing a semiconductor device, as
claimed in claim 4, wherein said protective coat is a
conductive film.
Claim 7
Dependent Claim
20 words
A method for producing a semiconductor device, as
claimed in claim 4, wherein said protective coat is of
titanium nitride.
Claim 8
Independent Claim
50 words
A method for producing a semiconductor device, as
claimed in any one of the preceding claims, wherein a
metal layer is formed below said fluourine-containing
carbon film, and after said fluorine-containing carbon
film is etched to expose said metal layer, oxide on the
metal layer is removed by argon plasma.
References Cited (Backward Citations)
No citation records indexed.
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