EP0913863A2
Expired / Lapsed
EP
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Method of manufacturing semiconductor device with copper wiring film
Assignee: NEC Corp
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Filing: 1998-10-21
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Granted: —
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Expires: 2018-10-21
Abstract
Abstract In a method of manufacturing a semiconductor device, a copper wiring film is formed in an interlayer insulating film by a damascene method. A protective insulating film is formed on the copper wiring film and the interlayer insulating film. Then, an opening is formed in the protective insulating film. Subsequently, an Al containing film is deposited on the protective insulating film to fill the opening. In this case, the Al containing film may be patterned. Instead, a CMP (chemical mechanical polishing) method may be performed to the Al containing film to embed the Al containing film in the opening.
Inventors
- 👤 Hideaki Onishi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 08:27
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W20/01; H10W20/031; H10W20/056; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P52/00; H10P52/40; H10P52/403; H10W20/062; H10W20/071; H10W20/081; H10W72/00; H10W72/01; H10W72/019; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/5525; H10W72/59; H10W72/90; H10W72/921; H10W72/923; H10W72/941; H10W72/9415; H10W72/951; H10W72/952; H10W72/981; H10W72/983
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
63 words
A method of manufacturing a semiconductor
device, comprising the steps of: forming a copper wiring film in an
interlayer insulating film by a damascene method; forming a protective insulating film on
said copper wiring film and said interlayer
insulating film; forming an opening in said protective
insulating film; and depositing an Al containing film on said
protective insulating film to fill said opening.
Claim 2
Dependent Claim
16 words
A method according to claim 1, further
comprising the step of patterning said Al
containing film.
Claim 3
Dependent Claim
32 words
A method according to claim 1, further
comprising the step of performing a CMP (chemical
mechanical polishing) method to said Al
containing film to embed said Al containing film
in said opening.
Claim 4
Independent Claim
27 words
A method according to any one of claims 1
to 3, wherein said Al containing film is selected
from the group consisting of Al, Al-Si, and Al-Si-Cu.
Claim 5
Independent Claim
44 words
A method according to any one of claims 1
to 4, wherein said step of forming a copper
wiring film further includes surrounding a whole
surface of said copper wiring film other than
said opening by a film for preventing copper
atoms from diffusing.
Claim 6
Dependent Claim
21 words
A method according to claim 5, wherein said
film for preventing copper atoms from diffusing
is composed of a nitride film.
Claim 7
Independent Claim
44 words
A method according to any one of claims 1
to 6, wherein said step of forming an opening in
said protective insulating film further includes
removing a copper oxide from said copper film by
a dry etching method after the formation of said
opening.
Claim 8
Dependent Claim
25 words
A method according to claim 7, wherein said
dry etching is O 2 plasma etching using a diluted
Hf gas and a H (hfac) gas.
Claim 9
Independent Claim
22 words
A method according to any one of claims 1
to 8, wherein said opening is an opening for an
Al bonding pad.
References Cited (Backward Citations)
No citation records indexed.
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